Datenblatt-pdf.com


RB551V-30 Schematic ( PDF Datasheet ) - Galaxy Semi-Conductor

Teilenummer RB551V-30
Beschreibung Schottky Barrier Diode
Hersteller Galaxy Semi-Conductor
Logo Galaxy Semi-Conductor Logo 




Gesamt 3 Seiten
RB551V-30 Datasheet, Funktion
BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z High current rectifier schottky diode.
z Low voltage;Low inductance.
z For power supply.
Pb
Lead-free
RB551V-30
APPLICATIONS
z High frequency rectification.
ORDERING INFORMATION
Type No.
Marking
RB551V-30
D
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Parameter
Symbol
Limits
Unit
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
VRM
VR
IO
IFSM
Tj
Tstg
30
20
0.5
2
125
-40~+125
V
V
A
A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Min.
Typ.
Max. Unit
Conditions
Forward voltage
VF
0.36
0.47
V
IF=100mA
IF=500mA
Reverse current
IR
100 μA
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
VR=20v
Document number: BL/SSSKB022
Rev.A
www.galaxycn.com
1





SeitenGesamt 3 Seiten
PDF Download[ RB551V-30 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
RB551V-30Schottky barrier DiodeJCET
JCET
RB551V-30Schottky barrier diodeROHM Semiconductor
ROHM Semiconductor
RB551V-30Schottky DiodesETC
ETC
RB551V-30Schottky DiodesTRANSYS
TRANSYS
RB551V-30Schottky Barrier DiodeMCC
MCC

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche