|
|
Teilenummer | RJK0629DPK |
|
Beschreibung | N-Channel Power MOS FET | |
Hersteller | Renesas | |
Logo | ||
Gesamt 7 Seiten RJK0629DPK
60V, 85A, 4.5m max.
N Channel Power MOS FET
High-Speed Switching Use
Features
VDSS: 60 V
RDS(on): 4.5 m (Max)
ID: 100 A
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1G
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
I Note2
AP
Pch Note3
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Tch 150C
2. STch = 25C, Tch 150C, L = 100 H
3. Value at Tc = 25C
Preliminary Datasheet
R07DS1061EJ0200
(Previous: REJ03G1875-0100)
Rev.2.00
Apr 09, 2013
2
D
1. Gate
2. Drain (Flange)
3. Source
S
3
Value
60
20
85
340
85
340
55
100
1.25
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS1061EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
RJK0629DPK
Package Dimensions
Package Name
TO-3P
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
φ3.2 ± 0.2
Previous Code
TO-3P / TO-3PV
MASS[Typ.]
5.0g
4.8 ± 0.2
1.5
Preliminary
Unit: mm
1.6
1.4 Max
2.0
2.8
1.0 ± 0.2
3.6 0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Ordering Information
Part No.
RJK0629DPK-00-T0
Quantity
360 pcs
Box (Tube)
Shipping Container
R07DS1061EJ0200 Rev.2.00
Apr 09, 2013
Page 6 of 6
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ RJK0629DPK Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
RJK0629DPE | N-Channel Power MOS FET | Renesas |
RJK0629DPK | N-Channel Power MOS FET | Renesas |
RJK0629DPN | N-Channel Power MOS FET | Renesas |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |